With the highly anticipated opening of TSMC’s Kumamoto fab on February 24th, 2024, multiple Japanese or global semiconductor manufacturers are set to begin large-scale production in newly established plants in Japan.

According to sources cited by TechNews, this development will stimulate the growth and advancement of Japan’s domestic semiconductor supply chain, enhancing Japan’s semiconductor manufacturing capabilities, transitioning from Renesas Electronics’ 40-nanometer process to JASM’s 12-nanometer process.

TSMC Kumamoto Fab Set to Open on February 24

In Kikuyo Town, Kumamoto Prefecture, Japan Advanced Semiconductor Manufacturing (JASM) company, jointly invested by TSMC, SONY, and Japan’s DENSO, is currently constructing a 12-inch fab.

▲ TSMC’s Layout of Global Production Capacity Edited by TrendForce, January, 2024

The facility will employ 12/16-nanometer and 22/28-nanometer process, focusing on the production of chips for automotive electronic applications. The fab is scheduled to open on February 24, with mass production expected to commence in the fourth quarter of 2024.

This shift is regarded as the first step in Japan’s semiconductor revitalization policy. In support of this initiative, the Japanese government has provided a financial subsidy of JPY 476 billion (approximately USD 3.2 billion) to the JASM fab, covering nearly one-third of the total expenditure, which amounts to USD 8.6 billion.

Kioxia and Western Digital Jointly Constructing 12-Inch Plant

NAND Flash memory giants Kioxia and Western Digital are jointly investing in the construction of a 12-inch plant in Yokkaichi, Mie Prefecture. The facility is set to begin preparing for mass production of 3D NAND Flash memory products by March 2024.

Industry sources note that the plant’s construction will cost JPY 280 billion (approximately USD 1.8 billion ), with the Japanese government providing up to 92.9 billion yen (approximately USD 600 million) in subsidies.

Another Kioxia and Western Digital joint venture plant located in Kitakami, Iwate Prefecture, is slated to open in the second half of 2024. Originally scheduled for completion in 2023, the project faced delays due to unfavorable market conditions.

Renesas Electronics Expands Power Semiconductor Capacity

Renesas Electronics is set to launch a new power semiconductor production line in 2024. However, since the company’s Kofu factory in Yamanashi Prefecture closed in October 2014, Renesas is committing JPY 90 billion to install a 12-inch wafer production line at its existing facility to meet the growing demand for power semiconductors, especially in electric vehicles (EVs).

The new production line will enable Renesas Electronics to enhance its capacity for power semiconductors such as IGBT and MOSFET, with plans to achieve mass production by 2024. Renesas Electronics’ expansion plan is expected to receive subsidy support from the Japanese Ministry of Economy, Trade, and Industry.

Toshiba and ROHM Semiconductor Collaborate to Integrate Production Lines for Power Semiconductors

Toshiba and ROHM Semiconductor have reached an agreement to collaborate. Under the agreement, Toshiba’s power semiconductor factory will begin integrating production with ROHM’s newly developed Silicon Carbide (SiC) power semiconductor plant in Kunitomi City, Miyazaki Prefecture. This collaboration is expected to receive government subsidies equivalent to one-third of the investment in the project.

Japan’s New Fab Projects Beyond 2025

Beyond 2025, Japan is set to witness the emergence of several new plants, including Micron Technology’s new 1-gamma (1γ) DRAM production facility in Hiroshima Prefecture.

JSMC, a foundry subsidiary of Powerchip Semiconductor Manufacturing Corporation (PSMC), is collaborating with Japan’s financial group SBI to complete construction by 2027 and begin chip production thereafter.

Additionally, Japanese semiconductor startup Rapidus plans to commence production of 2-nanometer chips in Hokkaido by 2027.

Furthermore, TSMC is currently evaluating plans for its second plant in Japan, expected to be located in Kikuyo Town, Kumamoto Prefecture. Reports suggest that TSMC is set to officially announce the location of the second wafer plant on February 6th.

Earlier discussions by TSMC Chairman Mark Liu regarding the second plant in Japan indicated ongoing evaluations and discussions with the Japanese government. Once the decision to build the second plant is finalized, it is anticipated to manufacture products utilizing 7-nanometer to 16-nanometer process technologies.

Japan’s resurgence in the semiconductor arena is palpable, with the Ministry of Economy, Trade, and Industry fostering multi-faceted collaborations with the private sector. With a favorable exchange rate policy aiding factory construction and investments, the future looks bright for exports.

However, the looming shortage of semiconductor talent in Japan is a concern. In response, there are generous subsidy programs for talent development. Japan is strategically positioning itself to reclaim its former glory in the world of semiconductors.

Read more

• [News] TSMC Reportedly Announcing Kumamoto Plant 2 in Japan, while U.S. Subsidies Expected by End of March
• [News] ROHM Eyes R&D Expansion in Power Semiconductor Production Venture with Toshiba

(Photo credit: TSMC)

With a financial boost from the Japanese government, electronic giants ROHM and Toshiba are joining forces in the power semiconductor industry. Collaboratively, they plan to not only enhance production but also delve into the realm of research and development, aiming to expand the capacities for Silicon Carbide (SiC) and Silicon (Si) power semiconductors.

In a joint announcement on December 8th, ROHM and Toshiba revealed their strategic collaboration in power semiconductor ventures, pooling a substantial investment totaling 388.3 billion Japanese Yen (ROHM: 289.2 billion JPY, Toshiba: 99.1 billion JPY). This capital injection aims to boost the capacities for SiC semiconductors, Si power semiconductors, and SiC wafers. The Japanese Ministry of Economy, Trade, and Industry is set to provide a generous subsidy, reaching up to 129.4 billion Japanese Yen for this collaborative venture.

Power semiconductors stand as the key necessity for energy-efficiency in electric vehicles (EVs) and industrial equipment. With a surge in global demand, ROHM concentrates its investment in SiC semiconductors, while Toshiba focuses on Si power semiconductors. The overarching objective is to elevate international competitiveness by fostering a robust collaborative manufacturing alliance.

As per report by the Japan Times, ROHM and Toshiba are embarking on a reciprocal production arrangement for power semiconductors. Toshiba leans significantly on ROHM for SiC semiconductor production, while ROHM entrusts Toshiba with the manufacturing of selected Si power semiconductors. The construction of Toshiba’s new plant in Nomi, Ishikawa Prefecture, sets the stage for Si power semiconductor supply commencing in March 2025. Meanwhile, ROHM’s new plant in Kunitomi, Miyazaki Prefecture, gears up to deliver SiC power semiconductors starting from April 2026.

Both two companies set up their goals in terms of future expansion in capacity. Toshiba envisions expanding power semiconductor capacity to 2.5 times that of the 2021 fiscal year by the 2024 fiscal year. Simultaneously, ROHM aims to elevate SiC power semiconductor capacity to 6.5 times that of the 2021 fiscal year by the 2025 fiscal year, with further expansions to 35 times by the 2030 fiscal year.

ROHM President and CEO, Isao Matsumoto, also shared the insights aiming the collaboration. In an interview with Nikkei Asia released on December 16th, Matsumoto expressed the company’s aspirations to broaden its power semiconductor collaboration with Toshiba, extending beyond production into the research and development.

Matsumoto stated that both companies aim to “discuss collaboration in development” after the launch of the joint production of power devices announced previously.

Matsumoto also emphasized that they will commence with commissioned production, and implied the possibility to enter the next stage. Looking ahead, He hope to explore collaboration involving engineer exchanges and development. When probed about the possibility of this collaboration leading to future business integration, he responded there is not definitive decision by now.

Kyodo News underscored that while Japanese firms have a significant presence in the global power semiconductor market, they often trail behind their European and American competitors, holding a market share in the 20% range. As a result, it is an urgent priority for Japanese firms to enhance international competitiveness, expand scale, and improve efficiency. This collaboration between ROHM and Toshiba is poised to serve as a catalyst for expediting the collaboration of other Japanese firms.

(Image: ROHM)

During an earnings call in November 2023, Isao Matsumoto, President of ROHM Semiconductor, disclosed the company’s plans to the production of 8-inch SiC substrates at its second plant in Miyazaki, Japan, starting in 2024. This is the first time ROHM will produce SiC substrates in Japan.

Notably, the Miyazaki Plant No.2 Project is part of ROHM’s ongoing capacity expansion strategy. The company intends to invest between 170 and 220 billion yen in its SiC business from 2021 to 2025.

For SiC power semiconductor manufacturers like ROHM, it’s imperative to bolster their SiC substrate production capacity. This is driven by two key factors. Firstly, there has been a shortage of substrate materials, which has posed a challenge for the SiC power semiconductor industry. Secondly, the growing wave of electric vehicles has led to an increased demand for SiC power semiconductors.

To thrive in the SiC power semiconductor industry and capture a big market share, major companies are actively investing in expanding their production capacity. They often choose to form supply agreements with suppliers, set up their own production lines, or acquire related businesses.

ROHM previously established a pioneering position in the industry by producing SiC substrates at its plant in Nuremberg, Germany, following the acquisition of SiCrystal, a German SiC substrate manufacturer.

The Miyazaki plant no.2, scheduled to start production in 2024, was originally the Kunitomi plant of Solar Frontier, a subsidiary of Idemitsu Kosan. In July of this year, ROHM announced its acquisition of the assets of Solar Frontier’s former Kunitomi plant, a deal that concluded in October. It’s worth noting that this plant will become ROHM’s largest SiC power semiconductor production hub in Japan.

While pursuing acquisitions, ROHM is also actively expanding its in-house production capacity. According to information on ROHM’s official website, the company currently operates four SiC power semiconductor production plants in Japan, located at its Kyoto headquarters, Chikugo Plant in Fukuoka, Nagahama Plant in Fukuoka, and Miyazaki plant no.1.

Both acquisitions and in-house production strategies help ensure a reliable product supply. However, in the dynamic SiC industry, forward-thinking leaders are eager to secure additional production capacity in advance. Collaboration with established manufacturers is a common approach, and ROHM is no exception.

In June of this year, ROHM signed a long-term supply partnership agreement for SiC power devices with Vitesco. According to this agreement, the combined transactions between the two companies from 2024 to 2030 will exceed 130 billion yen.
(Image: ROHM)

In recent developments, an industry source revealed that Coherent, a leading chip material supplier in the U.S. automotive industry, has piqued the interest of four major Japanese corporate groups with regards to its silicon carbide (SiC) business, with a transaction amount potentially reaching $5 billion.

The four Japanese companies involved are DENSO, Hitachi, Mitsubishi Electric, and Sumitomo Electric, and discussions have been underway regarding the acquisition of minority stakes in Coherent’s SiC business.

Coherent had previously stated its intention to invest $1 billion over the next decade to expand the production of SiC wafers. Compared to traditional silicon chips, SiC wafers contribute to improved electric vehicle range. If this investment materializes, it would significantly ease the financial burden on the company. However, no concrete agreements have been reached at this stage.

Data indicates that Coherent is one of the few companies globally with complete and vertically integrated SiC manufacturing capabilities. It can produce SiC wafers and epitaxy materials, extending all the way to power devices. Furthermore, Coherent’s SiC materials are known for their exceptional quality, making it nearly the only supplier capable of transitioning from the current standard wafer diameter of 150 millimeters to 200 millimeters successfully. The production of larger diameter wafers can substantially reduce device costs. Additionally, Coherent’s SiC power devices demonstrate excellent heat resistance and conductivity.

Competition and Collaboration in the Japanese SiC Industry

According to TrendForce’s latest analysis, as collaborations between companies like Infineon and ON Semiconductor with automotive and energy sector stakeholders become more apparent, the overall SiC power device market is projected to reach $2.28 billion in 2023, growing at an annual rate of 41.4%.

Meanwhile, buoyed by robust demand in downstream application markets, TrendForce anticipates that the SiC power device market could reach $5.33 billion by 2026, with its primary applications continuing to center around electric vehicles and renewable energy.

In recent years, the new energy vehicle industry has been thriving, and Si power devices have gradually fallen short of meeting the demands of new energy vehicles. SiC, as its alternative, has shown remarkable performance in applications, making it highly sought after in the market. The SiC power device market still has considerable room for growth, prompting both automotive and SiC companies to invest in SiC power device production or enhancements.

Japan, being a leader in semiconductor power device manufacturing and production, has numerous companies actively expanding to broaden their market reach.

On October 4th last year, Nikkan reported that Hitachi Power Semiconductor Device would invest several billion yen, aiming to triple its SiC power semiconductor production capacity by fiscal year 2026.

On July 12th this year, ROHM announced its acquisition of the former Solar Frontier factory in Kunitomi, Miyazaki, to expand its SiC power semiconductor production capacity. The acquisition is set to conclude in October 2023 and is planned to become the company’s main factory, primarily producing SiC power semiconductors. It is expected to increase its silicon carbide capacity to 35 times that of the fiscal year 2021 by 2030.

With these competitive and cooperative scenarios unfolding, it’s evident that neither automotive nor SiC companies are holding back in their pursuit of SiC power device production or improvements.

In July this year, Renesas Electronics signed a 10-year agreement and paid $2 billion in advance to Wolfspeed for the supply of 150mm bare and epitaxial SiC wafers. Renesas Electronics also reached an agreement with Mitsubishi Electric, with Mitsubishi investing 260 billion yen in technology and expansion, including the construction of a new SiC factory in Japan.

As a technological leader in producing SiC substrates, epitaxy, and power devices, Coherent is not to be overlooked by these major corporations.

On May 26th this year, Coherent and Mitsubishi Electric announced that they had signed a MOU and reached a project collaboration agreement to jointly scale up the mass production of SiC power electronic products on a 200mm technology platform.

Mitsubishi Electric announced that it would invest approximately 260 billion yen over a five-year period ending in March 2026, with approximately 100 billion yen dedicated to constructing a new SiC power device factory based on a 200mm technology platform and strengthening related production facilities. According to the MOU, Coherent will develop 200mm n-type 4H SiC substrates for Mitsubishi Electric’s future SiC power devices to be produced at the new factory.

In the future, Mitsubishi Electric aims to produce large quantities of silicon carbide chips using Coherent’s 200mm wafer technology in the Japanese market.

In the 2023 fiscal third-quarter earnings conference call, Mary Jane Raymond, the Chief Financial Officer of Coherent Inc., mentioned that the revenue composition of the company’s four main markets is as follows, based on regional distribution: North America accounts for 53%, Europe accounts for 20%, Japan and Korea account for 14%, China accounts for 11%, and 3% goes to other regions worldwide.

For Coherent, capturing 14% of the sales in the Japanese and Korean markets is highly significant. If Coherent continues its collaboration with Japanese partners, it is highly probable that the production capacity of SiC power devices in Japanese-related companies will be increased. Additionally, this will allow Coherent to further expand its influence and presence in Japan.

(Photo credit: Coherent)

Last week, major power semiconductor manufacturer Infineon announced plans to invest up to 5 billion euros over the next five years to construct the world’s largest 8-inch SiC power wafer factory in Kulim, Malaysia. This expansion will raise the total investment in the Kulim plant from 2 billion euros to 7 billion euros.

Interestingly, in February of this year, Wolfspeed announced its own plans to build what is touted as the world’s largest 8-inch SiC factory in the Saarland region of Germany. Infineon’s significant investment in the Malaysian 8-inch SiC factory sets the stage for potential competition with Wolfspeed, sparking an impending battle for Silicon Carbide production capacity.

In fact, driven by the rapid growth of industries like electric vehicles, the space for SiC power devices is expanding, attracting both Chinese companies and international enterprises to ramp up production.

According to statistics from TrendForce, aside from Wolfspeed, the first half of this year saw numerous companies, including STMicroelectronics, Mitsubishi Electric, Rohm, Soitec, and ON Semiconductor, expanding their production capacities. STMicroelectronics, for instance, announced a $4 billion investment in January to expand 12-inch wafer production. In June, they partnered with San’an Optoelectronics to establish a joint venture for 8-inch SiC device manufacturing, with an estimated total investment of around $3.2 billion.

On the Chinese front, there have been seven expansion projects related to Silicon Carbide. CRRC is investing 11.12 billion yuan to establish a project for the industrialization of medium and low-voltage power devices. YASC is also planning to construct a Compound Semiconductor power device production project, encompassing epitaxial growth, wafer manufacturing, packaging, and testing lines. Upon completion, the facility will have an annual production capacity of 360,000 6-inch SiC wafers and 61 million power device modules.

Additionally, BYD plans to invest 200 million yuan to establish a SiC epitaxial trial production and mass production project at its automotive production base in Shenzhen. The expansion will add 6,000 SiC epitaxial wafers per year, bringing the total capacity to 18,000 wafers per year.

(Photo credit: Tesla)