Apple recently unveiled its 140W MagSafe charger for the new MacBook Pro, marking the first time that Apple is adopting GaN technology. As such, 100+ watt fast charge products have thus entered a period of growth, in turn accelerating the adoption of third-generation semiconductor devices in consumer applications, according to TrendForce’s latest investigations. While GaN power transistor prices have dropped to nearly US$1 as of now, and GaN fast charge technologies continue to mature, TrendForce expects GaN solutions to reach a 52% penetration rate in the fast charge market in 2025.

TrendForce also indicates that the vast majority of GaN fast chargers’ peak power fell within the 55W-65W range in 2020. GaN fast chargers with 55W-65W of peak power accounted for 72% of all GaN fast charger sales last year, with 65W being the mainstream, whereas GaN fast chargers with 100W and more in peak power accounted for only 8%. Even so, the outlook for these high-power fast chargers appears relatively promising, as more and more companies release their own high-power fast chargers in response to consumers’ increasing energy consumption demand. Fast chargers with a peak power of 140W are the most powerful solution currently available.

Within the 100+ watt product category, GaN fast chargers have reached a penetration rate of 62%. These chargers are primarily supplied by Navitas and Innoscience. With a market share of more than 70%, Navitas’ GaN chips are used in products from Baseus, Lenovo, and Sharge, among others. On the other hand, PFC+LLC combo controllers have become the mainstream solution for 100+ watt fast chargers as these controllers allow for higher efficiency and smaller physical dimensions. The combination of SiC diodes and GaN switches results in increased PFC (power factor correction) frequency. As such, major manufacturers have quickly adopted the GaN+SiC wide bandgap semiconductor combo for their fast chargers.

For instance, Baseus released the world’s first ever 120W GaN (supplied by Navitas) + SiC (supplied by APS) fast charger in 2020 and saw excellent reception from the market. SiC power device suppliers, including Global Power Technology, Maplesemi, and onsemi, have also been ramping up their shipments to PD (power delivery) fast charger manufacturers. It should be pointed out that the fast charge interface has gradually become a standard feature in cars. In light of the rise of the high-power in-car charging market, the power consumption and maximum battery capacity of electronic products will propel the widespread application of third-generation semiconductors, including GaN and SiC, going forward.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

Demand for fast chargers used for various consumer electronics has been quickly rising. For instance, smartphone brands such as Xiaomi, OPPO, and Vivo led the industry by releasing fast chargers in 2018, subsequently gaining consumer acceptance via their fast chargers’ competitive advantages in cooling efficiency and compact physical dimensions. At the moment, notebook computer manufacturers are also expressing a willingness to adopt fast charging technology. Hence, the GaN power devices segment became the fastest-growing category in the third-generation semiconductor industry. TrendForce expects annual GaN power devices revenue for 2021 to reach US$83 million, an impressive 73% YoY increase.

Regarding the ranking of GaN power devices suppliers, Navitas is projected to obtain a 29% market share (measured by total shipment) and overtake Power Integration for the top position this year. Thanks to Navitas’ proprietary GaNFast power IC design and great relationships with its partners in the semiconductor supply chain, it has become the largest supplier of GaN power IC chips in the consumer electronics markets. The company is currently partnering with leading global smartphone and PC OEMs, including Dell, Lenovo, LG, Xiaomi, and OPPO. Given the rising demand for Navitas’ fast charge ICs from clients this year, the company is expected to transition its chip orders in 2H21 from TSMC’s Fab 2, which is a 6-inch wafer fab, to other 8-inch fabs instead, in order to resolve the issue of insufficient production capacity. At the same time, Navitas is also targeting SAIC (Xiamen Sanan) as a potential supplier of foundry services. With regards to other markets for GaN applications, Navitas will likely target the data center market first by releasing related products in 2022.

Proven power management IC supplier PI (Power Integrations) was the longtime undisputed leader in the GaN power devices market. For this year, PI has released the latest InnoSwitchTM4-CZ series of chips, based on its proprietary PowiGaNTM technology. Featured in products such as Anker’s 65W fast chargers, the InnoSwitch4-CZ chips have received universal acclaim from the fast charge market. In addition, PI’s recently released integrated AC-DC controller and USB PD controller ICs are expected to be major drivers of PI’s revenue growth this year. With an estimated 24% market share, PI will likely take the runner-up spot in the ranking of GaN power devices suppliers for 2021.

China-based Innoscience is expected to possess the third-highest market share in 2021 due to increased support from the Chinese government

It should be pointed out that the market share of China-based Innoscience is projected to rise to 20% this year, the third highest among GaN suppliers. Innoscience’s remarkable performance can primarily be attributed to the massive spike in its shipment of high-voltage and low-voltage GaN products. In particular, Innoscience’s GaN power ICs, used for fast chargers, are now entering the supply chains of tier-one notebook manufacturers for the first time ever. At the same time, while the company’s Suzhou-based 8-inch wafer fab has already kicked off mass production, Innoscience will gradually expand the competitive advantage derived from its IDM business model in the fast-evolving GaN industry. Not only is the company currently actively cultivating its presence in applications including Lidar, OBC (onboard charger) for EVs, and LED power supplies, but it will also look to increase its market share even further next year via its diverse product mix.

Incidentally, the Chinese government has been increasing its support of the domestic third-generation semiconductor industry, while the ongoing China-US trade war has also forced Huawei and other companies in the downstream supply chain to reassess potential supply chain risks. Taken together, these factors have now created the perfect opportunity for China’s third-generation semiconductor material and component suppliers in both qualification/validation and production of domestic substitutes, thereby further propelling the growth of the third-generation semiconductor industry in China. According to TrendForce’s investigations, China invested in about 25 projects aimed at expanding the domestic production capacity of third-generation semiconductors in 2020 (excluding GaN-based optoelectronics materials and devices). These projects totaled more than RMB¥70 billion, a 180% YoY increase.

In particular, commercial products manufactured using SiC substrates, which are the most crucial materials in the third-generation semiconductor industry chain, are primarily based on 4-inch wafers in China, but the country is currently migrating to 6-inch wafers. Although the technological gap between China and its global competitors is fast narrowing, China is still noticeably inferior in terms of monocrystalline quality, resulting in a relatively low self-sufficiency rate of high-performance SiC substrates. TrendForce’s data indicate that, as of 1H21, about seven production lines have been installed in China for GaN-on-Si wafers, while at least four production lines for GaN power devices are currently under construction, also in China. On the other hand, China possesses at least 14 production lines (including those allocated to pilot runs) for 6-inch SiC wafers.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

The traditional method of extending electronic devices’ battery life via reducing power consumption and increasing battery capacity has now reached its limits. In response, the fast charging industry is now looking to adopt fast chargers equipped with GaN chips as the latest mainstream solution that can further improve device battery life, with the demand for GaN chips recently seeing a progressive rise as well. At the 2021 Global Third Generation Semiconductor Fast Charging Industry Summit, major Chinese GaN solution supplier Innoscience announced the release of four GaN chips used in fast chargers: INN650D150A, INN650DA150A, INN650D260A, and INN650DA260A. All four chips have a maximum voltage of 650V, while their package dimensions mainly range from DFN 8×8 to DFN 5×6.

Established in 2015, Innoscience specializes in GaN chip design and manufacturing. The company’s GaN on Si process technology makes it one of the leading third-generation semiconductor IDMs in China. As geopolitical tensions escalate between China and the US, accelerating the development of domestic semiconductor supply chains has now become one of the top priorities for China. More specifically, due to the heavy usage of third-generation semiconductors such as SiC and GaN across the telecom, energy, and EV industries, the Chinese government has been aggressively fostering the growth of companies specializing in these semiconductors, with Innoscience becoming one of the leading suppliers chosen by the government.

GaN fast chargers released by Chinese brands at the moment, such as the Meizu GN01 and ROCK RH-PD65W, all feature GaN chips manufactured by Innoscience. Given China’s continued push for domestically manufactured semiconductor substitutes, Innoscience is expected to seize considerable shares in the rapidly growing GaN fast charging market in China.

Navitas and Power Integrations possess the greatest competitive advantages in the global GaN fast charging chip market

Founded in Ireland, IC design company Navitas has seen its GaN chips widely adopted in GaN fast chargers in recent years. For instance, Xiaomi’s 65W GaN charger contains Navitas’ NV6115 and NV6117 GaN chips, while Lenovo’s Thinkplus 65W charger also contains Navitas’ NV6125 GaN chips. At the moment, Navitas solutions are used by major brands including Xiaomi, OPPO, Lenovo, ASUS-Adol, and Dell, as well as by peripheral manufacturers including Anker and Baseus. TrendForce estimates that Navitas GaN chips reached a 50-60% share in the GaN charger market in 2020, making Navitas the largest supplier of GaN charger chips in the world.

Power Integrations, a US-based IDM, specializes in power semiconductor devices and possesses relatively mature GaN chip integration technologies. Power Integrations manufactures products with relatively smaller PCBA dimensions due to their reduced number of discrete components. By adopting Power Integrations’ GaN chips, charger manufacturers are in turn able to reduce the size of their chargers in order to deliver solutions that are more mobile and more convenient, making these chargers a perfect fit for fast charging needs of smartphones and notebook computers.

TrendForce, therefore, holds a positive outlook towards Power Integrations’ future potential. Power Integrations’ GaN chips are primarily used in peripherals manufactured by Aukey, Ugreen, IINE, and Remax, although they will likely enter the smartphone and notebook markets in the future due to Power Integration’s competitive advantage in technological integration.

（Cover image source: Unsplash）